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KPT811H

KPT811H
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Features

  • NPN phototransistor packaged in a 3 leads TO-18 for the base connection
  • Glass lens
  • Low leak current

Applications

  • Optical switches
  • Optical encoders
  • Photo-isolator
  • Camera stroboscopes
  • Inrared sensors
  • Automatic control apparatus

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Collector-emitter voltageVCEO20V
Emitter-collector voltageVECO5V
Collector-base voltageVCBO30V
Emitter-base voltageVEBO5V
Operating temperatureTopr-25 to +125Avoid dew condensation
Storage temperatureTstg-55 to +150Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeS0.64×0.64mm
Sensitive wavelengthλ400800(λp)1000Vλp=Peak wavelength
PhotocurrentIL2mAVCE=5V, 100lx(@2856K)
Dark currentID100200nAVCE=20V
Current amplification factorhFE600-VCE=5V, IC=2mA
Collector-Emitter Saturation VoltageVCE(sat)0.4VIC=0.1mA, 100lx(@2856K)
Rise/Fall Timetr,tf5µSVCE=5V, IC=2mA, RL=100Ω
Half angle17deg
KPT811H

Silicon Phototransistors : other products

 Model No.Sensitive size
(mm)
Peak Sensitive Wavelength
(nm), Typ.
Photocurrent
VCE=5V
Half Angle
(deg)
PackageApplications
(mA)(IX)
KPT801HB20.64×0.64800(λp)210017TO-18, hermetically sealedvisible light cut type
KPT811H0.64×0.64800(λp)210017With the base lead
KPT801C20.64×0.64880(λp)41000120epoxy resin lens on φ3 ceramic stemCeramic type
KPT081M310.64×0.64800(λp)7100060φ3 plastic mold Transparent resin mold type