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KPT801C2

KPT801C2
Download datasheet

Features

  • NPN phototransistor
  • Ceramic package
  • Low leak current

Applications

  • Optical switches
  • Optical encoders
  • Photo-isolators
  • Camera stroboscopes
  • Infrared sensors
  • Automatica control apparatus

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Collector-emitter voltageVCEO20V
Emitter-collector voltageVECO5V
Operating temperatureTopr-20 to +80Avoid dew condensation
Storage temperatureTstg-30 to +100Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeS0.64×0.64mm
Sensitive wavelengthλ400880(λp)1100Vλp=Peak wavelength
PhotocurrentIL4mAVCE=5V, 1000lx(@2856K)
Dark currentID100200nAVCE=20V
Current amplification factorhFE400-VCE=5V, IC=2mA
Collector-Emitter Saturation VoltageVCE(sat)0.4VIC=1mA, 1000lx(@2856K)
Rise/Fall Timetr,tf5µSVCE=5V, IC=2mA, RL=100Ω
Half angle120deg
KPT801C2

Silicon Phototransistors : other products

 Model No.Sensitive size
(mm)
Peak Sensitive Wavelength
(nm), Typ.
Photocurrent
VCE=5V
Half Angle
(deg)
PackageApplications
(mA)(IX)
KPT801HB20.64×0.64800(λp)210017TO-18, hermetically sealedvisible light cut type
KPT811H0.64×0.64800(λp)210017With the base lead
KPT801C20.64×0.64880(λp)41000120epoxy resin lens on φ3 ceramic stemCeramic type
KPT081M310.64×0.64800(λp)7100060φ3 plastic mold Transparent resin mold type