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KPD3212

KPD3212
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Features

  • Dual element photodiode
  • Transparent epoxy mold
  • Miniature surface mounting type

Application

  • Sensors
  • Industrial controls

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse voltageVR30V
Reverse CurrentIR0.5mAOne element
Forward currentIF10mAOne element
Operating temperatureTopr-20 to +85Avoid dew condensation
Storage temperatureTstg-30 to +90Avoid dew condensation
Soldering temperatureTsol260Soldering time less than 3 seconds
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeS1.5x1.0mm2One element
Sensitive wavelengthλ400950(λp)1100nmλp=Peak wavelength
Short Circuit CurrentIsh13µA1000lx @2856k
Dark currentID10nAVR=5V
Terminal capacitanceCt20pFVR=5V, f=1MHz
Half angle130deg
KPD3212

Silicon Photodiode Arrays : other products

 Model No.Sensitive size
(mm)
Peak Sensitive Wavelength
(nm), Typ.
ResposivityHalf Angle
(deg)
PackageApplications
(A/W)@λ(nm)
KDA16S0.74x2.0900(λp)0.54850Surface mount 16 channel array
KPD32121.5x1.0950(λp)130Dual element photodiode