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KPDA100P-H8

KPDA100P-H8
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Features

  • 1.3GHz response with 0.2mm dia.
  • 1.2GHz response with 0.5mm dia.
  • 0.6GHz response with 1.0mm dia.
  • High gain

Applications

  • Short wavelength optical communication
  • Optical measurement
  • Optical sensors
  • Weak light signal detection

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse CurrentIR0.2mA
Forward currentIF10mA
Operating temperatureTopr-40 to +85Avoid dew condensation
Storage temperatureTstg-40 to +125Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeD1000µm
Sensitive wavelengthλ400780(λp)1000nm
ResponsivityR0.40.45A/WM=1, λ=850nm
Breakdown voltageVB80120200VIR=100µA
Temperature coefficient of VBΔVB/ΔT0.55V/℃
Dark currentID301000pAVR=50V
Terminal capacitanceCt5.57.0pFVR=0.9VB, f=1MHz
Cutoff frequencyfc0.6GHzM=100, RL=50Ω, λ=850nm
KPDA100P-H8

Silicon Avalanche Photodiodes : other products

 Model No.Sensitive size
(µm dia.)
Peak Sensitive Wavelength
(nm)
ResposivityMultiplication
Factor
PackageApplications
(A/W)@λ(nm)
KPDA020P-H8200780(λp)0.45850150TO-18, hermetically sealedfc=1.3GHz
KPDA050P-H8500780(λp)0.45850150fc=1.2GHz
KPDA100P-H81000780(λp)0.45850150fc=0.6GHz
KPM1001000780(λp)(programable)APD module with amplifierIntegrated with a high speed transimpedance amplifier (100MHz) and a high voltage bias source