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InGaAs NIR Photodiodes
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KPDE150

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Features

  • large sensitive area
  • Low voltage operation
  • Custom designed large area photodiode is also available

Applications

  • Laser power monitor
  • Laser diode and LED aging equipment
  • Near infrared sensing system
  • Power meters

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse voltageVR2V
Reverse CurrentIR2mA
Forward currentIF2mA
Operating temperatureTopr-20 to +70Avoid dew condensation
Storage temperatureTstg-20 to +80Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeD1500µm
Sensitive wavelengthλ9001700nm
ResponsivityR0.8
0.9
0.9
1.0
A/WVR=5V, λ=1310nm
VR=5V, λ=1550nm
Dark currentID1µAVR=1V
Total capacitanceCt0.15nFVR=1V, f=1MHz
KPDE150

InGaAs NIR Photodiodes : other products

 Model No.Sensitive size
(µm dia.)
Sensitive wavelength range
(nm)
ResposivityPackageApplications
(A/W)@λ(nm)
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KPDE030300900 - 17000.9
1.0
1310
1550
KPDE086S0.86x0.86 (mm2)900 - 17000.9
1.0
1310
1550
KPDE1501500900 - 17000.9
1.0
1310
1550
TO-18, hermetically sealed
KPDE3003000900 - 17000.9
1.0
1310
1550
TO-5, hermetically sealed
KPDF030F22-H83001200 - 23001.21950TO-18, hermetically sealed
KPDF030F26-H83001200 - 27001.22200
KPC8-T(SMF)1300 - 1600Single mode fiber pigtailedPhnotovoltaic Power Converter, Complete electrical isolation, Remote powered equipments, Electro-magnetic sensitive antenna