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InGaAs NIR Photodiodes
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KPDE086S

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Features

  • 1mm sq. large sensitive area
  • Low dark current
  • Low voltage operation

Applications

  • Near infrared sensors
  • Laser diode and LED power monitor
  • Near infrared spectroscopy
  • Power meters

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse voltageVR20V
Maximum optical power inputPimax50mW
Forward currentIF50mA
Operating temperatureTopr-40 to +85Avoid dew condensation
Storage temperatureTstg-40 to +85Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeD0.86x0.86 (mm2)µm
Sensitive wavelengthλ9001700nm
ResponsivityR0.8
0.9
0.9
1.0
A/WVR=5V, λ=1310nm
VR=5V, λ=1550nm
Dark currentID110nAVR=5V
BandwidthBW30MHzPi=-10dBm, VR=5V, small signal modulation
Chip capacitanceCchip4560pFVR=5V, f=1MHz
Total capacitanceCt45p60pFVR=5V, f=1MHz
Responsivity uniformityΔR0.5dBλ=1530-1610nm, Topr=-10 to +85℃
KPDE086S

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