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InGaAs NIR Photodiodes
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KPDE0301M51

KPDE0301M51
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Features

  • NIR sensitive up to 1700nm
  • Plastic mold package
  • Various package option (Ceramic, Metal stem, TO-CAN)

Applications

  • Optical switches
  • Sensors and industrial controls

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse voltageVR20V
Reverse CurrentIR0.5mA
Forward currentIF50mA
Operating temperatureTopr-20 to +80Avoid dew condensation
Storage temperatureTstg-30 to +100Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeD300µm
Sensitive wavelengthλ9001550(λp)1700nmλp=Peak wavelength
ResponsivityR0.9A/Wλ=1550nm
Dark currentID1nAVR=5V
Terminal capacitanceCt46pFVR=5V, f=1MHz
KPDE0301M51

InGaAs NIR Photodiodes : other products

 Model No.Sensitive size
(µm dia.)
Sensitive wavelength range
(nm)
ResposivityPackageApplications
(A/W)@λ(nm)
KPDE0301M51300900 - 17000.91550φ3 plastic mold Water content analyzer, Gas analyzer, NIR spectroscopy, Humidity analysis, Optical switches, Optical instruments, Optical power meter
KPDE030300900 - 17000.9
1.0
1310
1550
KPDE086S0.86x0.86 (mm2)900 - 17000.9
1.0
1310
1550
KPDE1501500900 - 17000.9
1.0
1310
1550
TO-18, hermetically sealed
KPDE3003000900 - 17000.9
1.0
1310
1550
TO-5, hermetically sealed
KPDF030F22-H83001200 - 23001.21950TO-18, hermetically sealed
KPDF030F26-H83001200 - 27001.22200
KPC8-T(SMF)1300 - 1600Single mode fiber pigtailedPhotovoltaic Power Converter, Complete electrical isolation, Remote powered equipment, Electro-magnetic sensitive antenna