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Thermoelectrically Cooled InGaAs/InAs Photodiodes
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KPDS100-H54PS

KPDS100-H54PS
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Features

  • Φ1.0mm sensitive area
  • Cutoff wavelength 3.5μm
  • TO-5 package
  • One-stage TE cooler

Applications

  • MID-IR sensors
  • MID-IR spctroscopy
  • Gas analysis
  • Temperature sensors

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse voltageVR0.5V
Thermistor power ratingPth1.5mW
TE Cooler currentIC1.0A
TE Cooler voltageVC1.85V
Operating temperatureTopr-40 to +60Avoid dew condensation
Storage temperatureTstg-40 to +80Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeSφ1(mm)mm2
Sensitive wavelengthλ3300(λp)
3200(λp)
nmCooler temperature 25℃
Cooler temperature -20℃
ResponsivityR1.0
1.2
1.2
1.4
A/Wλ=λp, Cooler temperature 25℃
λ=λp, Cooler temperature -20℃
Cut off wavelengthλC3.5
3.4
µmCooler temperature 25℃
Cooler temperature -20℃
Shunt resistanceRsh15
300
18
380
Ω
DetectivityD*2.5x10^9
1.4x10^10
3.5x10^9
1.7x10^10
cmHz1/2/Wλ=λp, Cooler temperature 25℃
λ=λp, Cooler temperature -20℃
KPDS100-H54PS

Thermoelectrically Cooled InGaAs/InAs Photodiodes : other products

 Model No.Sensitive size
(mm)
Peak Sensitive Wavelength
(nm), Typ.
ResposivityHalf Angle
(deg)
PackageApplications
(A/W)@λ(nm)
KPDE086S-H54P0.86x0.861600(λp)0.9
1.0
1310
1550
TO-5, hermetically sealed with TE coolerNear InfraRed(NIR) spectroscopy, Near InfraRed(NIR) sensors
KPDE086S-H85P0.86x0.861600(λp)0.9
1.0
1310
1550
TO-46, hermetically sealed with TE cooler
KPDS100-H54PSφ1(mm)3300(λp)
3200(λp)
1.2
1.4
3300TO-5, hermetically sealed with TE cooler