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Thermoelectrically Cooled InGaAs/InAs Photodiodes
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KPDE086S-H85P

KPDE086S-H85P
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Features

  • 860 µm sq. large sensitive area
  • Low dark current. High shunt resistance
  • Electrically cooled with TEC and thermistor
  • Small size (TO-46 Package)

Applications

  • Near IR sensors
  • Near IR spectroscopy
  • Power meters

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse voltageVR20V
Maximum optical power inputPimax100mW
Forward currentIF50mA
Thermistor power ratingPth1.5mW
TE Cooler currentIC1.0(max)A
Operating temperatureTopr-40 to +70Avoid dew condensation
Storage temperatureTstg-40 to +85Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeS0.86x0.86mm2
Sensitive wavelengthλ1600(λp)nmλp=Peak wavelength
ResponsivityR0.8
0.9
0.9
1.0
A/Wλ=1310nm
λ=1550nm
Dark currentID110nAVR=5V
Terminal capacitanceCt4560pFf=1MHz
KPDE086S-H85P

Thermoelectrically Cooled InGaAs/InAs Photodiodes : other products

 Model No.Sensitive size
(mm)
Peak Sensitive Wavelength
(nm), Typ.
ResposivityHalf Angle
(deg)
PackageApplications
(A/W)@λ(nm)
KPDE086S-H54P0.86x0.861600(λp)0.9
1.0
1310
1550
TO-5, hermetically sealed with TE coolerNear InfraRed(NIR) spectroscopy, Near InfraRed(NIR) sensors
KPDE086S-H85P0.86x0.861600(λp)0.9
1.0
1310
1550
TO-46, hermetically sealed with TE cooler
KPDS100-H54PSφ1(mm)3300(λp)
3200(λp)
1.2
1.4
3300TO-5, hermetically sealed with TE cooler