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KPID050M

KPID050M
Download datasheet

Features

  • 2GHz response with 200µm active diameter
  • 0.4GHz response with 500µm active diameter
  • Low dark current ( Typ.10pA @ VR=3V )
  • Low voltage operation
  • Various package options are also available
    Package option

Applications

  • Short wavelength optical communication
  • Optical measurement
  • Optical sensors

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse voltageVR50V
Reverse CurrentIR10mA
Forward currentIF1mA
Operating temperatureTopr-40 to +85Avoid dew condensation
Storage temperatureTstg-40 to +85Avoid dew condensation
Soldering temperatureTsol260Soldering time less than 5 seconds
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeD500μmφ
Sensitive wavelengthλ4001000nm
ResponsivityR0.35A/WVR=3V, λ=850nm
Dark currentID40160pAVR=3V
Total capacitanceCt4.55.5pFVR=3V, f=1MHz
Cutoff frequencyfc0.4GHzRL=50Ω, VR=3V
KPID050M

Si PIN Photodiodes : other products

 DescriptionModel No.Sensitive sizeDark CurrentPackageApplications
Typ.
Si high speed photodiodeKPID020D200μmφ10pA@3Vhermetically sealedDC-2GHz receivers
Si high speed photodiodeKPID050M500μmφ40pA@3VDC-400MHz receivers
Mini CanKPID020DS-S200μmφ15pA@10VHigh density packaging of multile phofodiode channels
Cap isolated mini can
Si high speed photodiodeKPID150HC1500μmφ0.8nA@10VChip MaterialOptical communication,
High speed measurement systems