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KPDE086S

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Features

  • Large sensitive area of 1-mm-square
  • Low dark current
  • Low voltage operation

Applications

  • Near infrared sensors
  • Laser diode and LED power monitor
  • Near infrared spectroscopy
  • Power meters

Package option (1)

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse voltageVR20V
Maximum optical power inputPimax50mW
Forward currentIF50mA
Operating temperatureTopr-40 to +85Avoid dew condensation
Storage temperatureTstg-40 to +85Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeD0.86 x 0.86 (mm) 
BandwidthBW30MHzPi=-10dBm, VR=5V, small signal modulation
ResponsivityR0.8
0.9
0.9
1.0
A/Wλ=1310nm, VR=5V
λ=1550nm, VR=5V
Dark currentID110nAVR=5V
Chip capacitanceCchip4560pFVR=5V, f=1MHz
Total capacitanceCt4560pFVR=5V, f=1MHz
Responsivity uniformityΔR0.5dBλ=1530-1610nm, Topr=-10 to +85℃
KPDE086S

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