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InGaAs Avalanche Photodiodes
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KPDEA007-56F

KPDEA007-56F
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Features

  • High speed (Up to 1.25Gbps)
  • Low dark current
  • High sensitivity

Applications

  • SONET
  • GE-PON

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse CurrentIR2mA
Forward currentIF10mA
Operating temperatureTopr-40 to +85Avoid dew condensation
Storage temperatureTstg-40 to +85Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeD75μmφ
BandwidthBW2.0GHzM=10
ResponsivityR0.80
0.90
0.90
1.05
A/Wλ=1310nm, M=1
λ=1550nm, M=1
Breakdown voltageVB354555VID=10μA
Dark currentID1565nA0.9xVB
Temperature coefficient of VBΔVB/ΔT0.080.100.12V/℃
Chip capacitanceCchip0.540.65pFf=1MHz
Total capacitanceCt0.91.1pFf=1MHz

InGaAs Avalanche Photodiodes : other products

 DescriptionModel No.Sensitive sizeBandwidth
M=10
PackageApplications
APDKPDEA005-56F55μmφ3.0GHzhermetically sealedLow noise factor,
Back bone,
OTDR,
Weak light signal detection
APDKPDEA007-56F75μmφ2.0GHz