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InGaAs Avalanche Photodiodes
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KPDEA005-56F

KPDEA005-56F
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Features

  • High speed (Up to 2.5Gbps)
  • Low dark current
  • High sensitivity

Applications

  • SONET
  • G-PON, GE-PON

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse CurrentIR2mA
Forward currentIF10mA
Operating temperatureTopr-40 to +85Avoid dew condensation
Storage temperatureTstg-40 to +85Avoid dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeD55μmφ
BandwidthBW3.0GHzM=10
ResponsivityR0.85
0.95
0.95
1.05
A/Wλ=1310nm, M=1
λ=1550nm, M=1
Breakdown voltageVB354555VID=10μA
Dark currentID1050nA0.9xVB
Temperature coefficient of VBΔVB/ΔT0.080.100.12V/℃
Chip capacitanceCchip0.380.50pFf=1MHz
Total capacitanceCt0.680.80pFf=1MHz

InGaAs Avalanche Photodiodes : other products

 DescriptionModel No.Sensitive sizeBandwidth
M=10
PackageApplications
APDKPDEA005-56F55μmφ3.0GHzhermetically sealedLow noise factor,
Back bone,
OTDR,
Weak light signal detection
APDKPDEA007-56F75μmφ2.0GHz